We study quantum phase transitions driven by modulation of external variables such as a gate voltage and pressure in low-dimensional chalcogenide devices. Transition metal dichalcogenide nanostructures are especially promising platforms because they exhibit diverse, competing ordered phases including metallic, insulating, superconducting, and charge-density-wave states from strong electron correlations. This research will allow the in-depth physical understanding of new quantum phases and further development of electronic devices which are not only more efficient, but also operating based on new principles such as ultrafast and power-saving superconducting field-effect-transistors.